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| DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2010AEB 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package Product data sheet 2003 Dec 03 NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package FEATURES * Forward current: 1.0 A * Reverse voltage: 20 V * Ultra low forward voltage * Ultra small SMD package. PINNING APPLICATIONS * Low voltage rectification * High efficiency DC/DC conversion * Voltage clamping * Inverse-polarity protection * Low power consumption applications. 1 2 PMEG2010AEB QUICK REFERENCE DATA SYMBOL IF VR PARAMETER forward current reverse voltage MAX. 1 20 UNIT A V PIN 1 2 DESCRIPTION cathode anode DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small plastic SMD package. Top view col001 Marking code: L6. The marking bar indicates the cathode. Fig.1 Simplified outline (SOD523; SC-79) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEG2010AEB RELATED PRODUCTS TYPE PMEG2005EB PMEG2010EA DESCRIPTION 1 A; 20 V very low VF MEGA Schottky rectifier FEATURE Lower forward current, lower IR SOD323 (SC76) - DESCRIPTION plastic surface mounted package; 2 leads VERSION SOD523 0.5 A; 20 V very low VF MEGA Schottky rectifier Lower IR in same package 2003 Dec 03 2 NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb Note PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature note 1 note 1 Ts 55 C tp 1 ms; 0.5 t = 8 ms square wave CONDITIONS - - - - -65 - -65 PMEG2010AEB MIN. MAX. 20 1.0 3.5 6 +150 150 +150 V A A A UNIT C C C 1. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Rth(j-s) Notes 1. Refer to SOD523 (SC-79) standard mounting conditions. 2. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 3. Solder point of cathode tab. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS in free air; notes 1 and 2 notes 2 and 3 VALUE 400 75 UNIT K/W K/W 2003 Dec 03 3 NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage IF = 1 mA IF = 10 mA IF = 100 mA IF = 1 000 mA IR Cd Note 1. Pulse test: tp 300 s; 0.02. continuous reverse current diode capacitance VR = 10 V; note 1 VR = 20 V; note 1 VR = 1 V; f = 1 MHz CONDITIONS IF = 0.1 mA PMEG2010AEB TYP. 30 80 140 230 510 0.17 0.32 19 MAX. 60 110 190 290 620 0.6 1.5 25 UNIT mV mV mV mV mV mA mA pF 2003 Dec 03 4 NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package GRAPHICAL DATA PMEG2010AEB 103 IF (mA) 102 com001 105 handbook, halfpage I R (A) 104 (1) MLE228 103 (2) (1) (2) (3) 10 102 10 1 (3) 1 10-1 0 0.2 0.4 0.6 VF (V) 0.8 10-1 0 8 16 VR (V) 24 (1) Tamb = 85 C. (2) Tamb = 25 C. (3) Tamb = -40 C. (1) Tamb = 85 C. (2) Tamb = 25 C. (3) Tamb = -40 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. 30 Cd (pF) 25 com002 20 15 10 5 0 0 5 10 15 VR (V) 20 f = 1 MHz; Tamb = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Dec 03 5 NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package PACKAGE OUTLINE PMEG2010AEB Plastic surface mounted package; 2 leads SOD523V A c HE vMA D A 0 0.5 scale 1 mm 1 E bp 2 DIMENSIONS (mm are the original dimensions) UNIT mm A 0.65 0.58 bp 0.34 0.26 c 0.17 0.11 D 1.25 1.15 E 0.85 0.75 HE 1.65 1.55 v 0.1 (1) Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523V REFERENCES IEC JEDEC JEITA SC-79 EUROPEAN PROJECTION ISSUE DATE 00-12-07 02-04-19 2003 Dec 03 6 NXP Semiconductors Product data sheet 20 V, 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION PMEG2010AEB This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Dec 03 7 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp8 Date of release: 2003 Dec 03 Document order number: 9397 750 11911 |
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